Model Code (Capacity)1)
MZ-V8P250BW (250GB)
MZ-V8P500BW (500GB)
MZ-V8P1T0BW (1TB)
MZ-V8P2T0BW (2TB)
General Feature
Application
Client PCs
FORM FACTOR
M.2 (2280)
INTERFACE
PCIe® Gen 4.0 x4, NVMe™ 1.3c
DIMENSION (WxHxD)
80.15 x 22.15 x 2.38 (mm)
WEIGHT
Max 9.0 g
STORAGE MEMORY
Samsung V-NAND 3-bit MLC
CONTROLLER
Samsung In-house Controller
CACHE MEMORY
Samsung 512MB Low Power DDR4 SDRAM
(250/500GB)
Samsung 1GB Low Power DDR4 SDRAM (1TB)
Samsung 2GB Low Power DDR4 SDRAM (2TB)
Special Feature
TRIM Support
Supported
S.M.A.R.T Support
Supported
GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0), TCG/Opal,
IEEE1667 (Encrypted drive)WWN SUPPORT
Not Supported
DEVICE SLEEP MODE SUPPORT
Yes
Performance2)
SEQUENTIAL READ
250GB: Up to 6,400 MB/s
500GB: Up to 6,900 MB/s
1TB: Up to 7,000 MB/s
2TB: Up to 7,000 MB/sSEQUENTIAL WRITE
250GB: Up to 2,700 MB/s
500GB: Up to 5,000 MB/s
1TB: Up to 5,000 MB/s
2TB: Up to 5,100 MB/sRANDOM READ (4KB, QD32)
250GB: Up to 500,000 IOPS
500GB: Up to 800,000 IOPS
1TB: Up to 1,000,000 IOPS
2TB: Up to 1,000,000 IOPSRANDOM WRITE (4KB, QD32)
250GB: Up to 600,000 IOPS
500GB: Up to 1,000,000 IOPS
1TB: Up to 1,000,000 IOPS
2TB: Up to 1,000,000 IOPSRANDOM READ (4KB, QD1)
250GB: Up to 22,000 IOPS
500GB: Up to 22,000 IOPS
1TB: Up to 22,000 IOPS
2TB: Up to 22,000 IOPSRANDOM WRITE (4KB, QD1)
250GB: Up to 60,000 IOPS
500GB: Up to 60,000 IOPS
1TB: Up to 60,000 IOPS
2TB: Up to 60,000 IOPS
Environment
AVERAGE POWER CONSUMPTION (System Level)3)
250GB: Average 5 W Maximum 7 W
512GB: Average 5.9 W Maximum 7.4 W
1TB: Average 6.2 W Maximum 8.9 W
2TB: Average 6.1 W Maximum 7.2 W
(Burst mode)